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AEGIS
SEMICONDUTORES LTDA.
A5A:1450.XX
VOLTAGE RATINGS
Part Number VRRM , VR (V) Max. rep. peak reverse voltage TJ = 0 to 175OC A5A:1450.24 A5A:1450.26 A5A:1450.28 A5A:1450.30 A5A:1450.32 A5A:1450.34 A5A:1450.36 A5A:1450.38 A5A:1450.40 A5A:1450.42 2400 2600 2800 3000 3200 3400 3600 3800 4000 4200 TJ = -40 to 0 OC 2400 2600 2800 3000 3200 3400 3600 3800 4000 4200 VRSM , VR (V) Max. non-rep. peak reverse voltage TJ = 25 to 175OC 2500 2700 2900 3100 3300 3500 3700 3900 4100 4300
MAXIMUM ALLOWABLE RATINGS
PARAMETER TJ Junction Temperature Tstg Storage Temperature IF(AV) Max. Av. current @ Max. TC VALUE -40 to 175 -40 to 175 1100 125 2290 17.2 IFSM Max. Peak non-rep. surge current 18.8 kA 19.6 21.4 1535 I2t Max. I2t capability 1674 1750 1908 I2t1/2 Max. I2t1/2 capability F Mounting Force 20900 2500 kA2s1/2 N.m kA2s 50 Hz half cycle sine wave 60 Hz half cycle sine wave t = 10ms t = 8.3 ms t = 10ms Initial T J = 175 C, no voltage applied after surge.
O O
UNITS
O O
NOTES 180 half sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave Initial T J = 175OC, rated VRRM applied after surge. Initial T J = 175O C, no voltage applied after surge. Initial T J = 175 C, rated VRRM applied after surge.
O O
C C A C A
IF(RMS) Nom. RMS current
t = 8.3 ms O Initial T J = 175 C, no voltage applied after surge. I2t for time t x = I2t1/2 * tx1/2. (0.1 < tx < 10ms). -
AEGIS
SEMICONDUTORES LTDA.
A5A:1450.XX
CHARACTERISTICS
PARAMETER VFM Peak forward voltage V(TO) Threshold voltage rF Slope resistance IRM Peak reverse current RthJC Thermal resistance, junction-to-case RthCS Thermal resistance, case-to-sink wt Weight Case Style MIN. ------------------TYP. 1.5 ----60 --------425 A-24 MAX. UNITS 2.05 1.06 0.305 125 0.023 0.025 0.025 0.01 --V V mW mA
O O O O O
TEST CONDITIONS Initial T J = 25 C, 50-60Hz half sine, Ipeak = 3456A. TJ = 175 C, Av. power = V F(TO) * IF(AV) +rF * [IF(RMS)]2 Use low values for IFM < pIF(AV) TJ = 175 C. Max. rated VRRM
O
C/W DC operation, double side C/W 180O sine wave, double side
C/W 120O rectangular wave, duble side Mtg. Surface smooth, flat and greased. Single side. For O C/W double side, divide value by 2. g(oz.) -----
Maximum Allowable Case Temperature
180 180
Maximum Allowable Case Temperature
Maximum Allowable Case Temperature (C)
Maximum Allowable Case Temperature (C)
170 160 150 140 130 120 110 100 90 0 250 500 750 1000 1250 1500
*Sinusoidal waveform 30 60 90 120 180
170 160 150 140 130 120
30
110 100 90 80 70 0 250 500 750
*Rectangular waveform
60 90 120 180
DC
1000 1250 1500 1750 2000 2250 2500
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
AEGIS
SEMICONDUTORES LTDA.
A5A:1450.XX
Maximum Average Forward Power Loss
12000
30
Maximum Average Forward Power Loss
10000
Maximum Average Forward Power Loss (W)
10000
Maximum Average Forward Power Loss (W)
30
8000
8000
60
6000
60
6000
90
4000
90 120 180
4000
120 180
2000
DC
2000
0
*Sinusoidal waveform
0
*Rectangular waveform
0
200
400
600
800
1000
1200
1400
1600
0
200
400
600
800
1000
1200
1400
1600
Average Forward Current (A)
Average Forward Current (A)
Fig. 3 - Average Forward Power Loss Characteristics
Fig. 4 - Average Forward Power Loss Characteristics
Forward Voltage Drop Charateristics
Transient Thermal Impedance ZthJC (C/W)
Transient Thermal Impedance Characteristics
10000
Forward Current (A)
0.1
1000
175 25
100 0.5 1.0 1.5 2.0 2.5 3.0 3.5
0.01 1E-3
0.01
0.1
1
10
Forward Voltage (V)
Time (s)
Fig. 5 - Forward Voltage Drop Characteristics
Fig. 6 - Transient Thermal Impedance ZthJC Characteristics
AEGIS
SEMICONDUTORES LTDA.
A5A:1450.XX A-24
Fig. 7 - Outline Characteristics

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